Excess Carrier Lifetimes in (HgCd)Te Grown by Mocvd Interdiffused Multilayer Process
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- As diffusion in Hg1-xCdxTe for junction formationSemiconductor Science and Technology, 1993
- Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTeSemiconductor Science and Technology, 1993
- Properties of p-on-n heterojunctions made with MCT grown by MOCVDJournal of Crystal Growth, 1992
- Investigation of mercury interstitials in Hg1−xCdxTe alloys using resonant impact-ionization spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Noncontact lifetime characterization technique for LWIR HgCdTe using transient millimeter-wave reflectancePublished by SPIE-Intl Soc Optical Eng ,1991
- The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodesJournal of Crystal Growth, 1991
- The excess carrier lifetime in vacancy- and impurity-doped HgCdTeJournal of Vacuum Science & Technology A, 1990
- On the Auger Recombination Process in P-Type Lpe HgCdTeMRS Proceedings, 1986
- Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector StructuresMRS Proceedings, 1986
- Deep level studies of Hg1−xCdx Te. I: Narrow-band-gap space-charge spectroscopyJournal of Applied Physics, 1981