Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector Structures
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- Electrical properties of shallow levels in p-type HgCdTeJournal of Applied Physics, 1986
- Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effectsJournal of Applied Physics, 1985
- Status of point defects in HgCdTeJournal of Vacuum Science & Technology A, 1985
- Acceptor doping of bridgman-grown CdxHg1−xTeJournal of Crystal Growth, 1985
- Electronic properties of HgCdTeJournal of Vacuum Science and Technology, 1982
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Comparison of Hg0.6Cd0.4Te LPE layer growth from Te-, Hg-, and HgTe-rich solutionsIEEE Transactions on Electron Devices, 1980
- HgCdTe photoconductive detector arrayIEEE Transactions on Electron Devices, 1980
- Doping properties of selected impurities in Hg1−x Cdx TeJournal of Electronic Materials, 1977
- Partial pressures of Hg(g) and Te2(g) in Hg-Te system from optical densitiesJournal of Physics and Chemistry of Solids, 1965