An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser
- 1 February 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (2) , 194-196
- https://doi.org/10.1109/68.655355
Abstract
We have fabricated a p-type delta-doped InGaAs-GaAs quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) with a low-resistance GaAs-AlAs distributed Bragg reflector (DBR). The threshold was as low as 700 /spl mu/A for 10/spl times/10 /spl mu/m/sup 2/ devices. A penalty-free 10-Gb/s transmission experiment with a 100-m-long multimode fiber was performed using fabricated VCSELs. The modulation speed was up to 12 Gb/s, which was limited by an RC constant. Further threshold reduction and high-speed operation can be expected by controlling the doping concentration in p-type delta-doped layers.Keywords
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