Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs
- 1 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3) , 288-290
- https://doi.org/10.1063/1.95661
Abstract
Room‐temperature continuous and time‐resolved (on a nanosecond scale) photoluminescence experiments have been performed on p‐type GaAs. Observation of indirect luminescence in GaAs above 4 GPa allowed a direct determination of the room‐temperature pressure coefficient of the Xc1 valleys. A new set of pressure dependence parameters for both Γ and X energy gaps in GaAs has been determined. These pressure coefficients, together with the intensity of luminescence as a function of pressure, yielded an estimate of the electron lifetime ratio confirmed by subsequent time‐resolved experiments. A threefold enhancement of electron lifetime is observed above the Γ‐X crossover.Keywords
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