I n s i t u study of p-type amorphous silicon growth from B2H6:SiH4 mixtures: Surface reactivity and interface effects
- 19 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1086-1088
- https://doi.org/10.1063/1.100029
Abstract
In situ ellipsometry provides monolayer sensitivity to the reaction of B2H6:SiH4 doping gas mixtures with p‐ and i‐type plasma‐enhanced chemical vapor deposited (PECVD) amorphous silicon (a‐Si:H) surfaces at 180 and 250 °C. This low‐temperature reaction, leading to the slow growth (1–3 Å/min) of a‐Si:H:B by CVD (without plasma excitation), requires a clean a‐Si:H surface and both B2H6 and SiH4 in the doping gas. We suggest that the high B content of CVD a‐Si:H:B at p‐i and i‐p interfaces and on the film‐coated regions of single‐chamber reactors, may contribute to poor interface characteristics and residual contamination in devices.Keywords
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