Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxy
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 266-269
- https://doi.org/10.1016/0022-0248(90)90979-u
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTeJournal of Crystal Growth, 1989
- High quality, single crystal CdTe grown by a modified horizontal Bridgman techniqueJournal of Crystal Growth, 1988
- Vapor growth of CdTe as substrate material for Hg1-xCdxTeepitaxyJournal of Crystal Growth, 1988
- Lattice constants of Cd1−xZnxTe mixed compound semiconductorMaterials Letters, 1986
- Growth of Hg 1-x Cd x Te-epitaxial Layers By A Multi-Slice LPE ApparatusPublished by SPIE-Intl Soc Optical Eng ,1986
- X-ray determination of dislocation density in epitaxial ZnCdTeApplied Physics Letters, 1985
- Properties of CdTe crystals grown by THM using Cd as the solventJournal of Crystal Growth, 1985
- Observation of dislocations in cadmium telluride by cathodoluminescence microscopyApplied Physics Letters, 1979
- The melt-growth and characterization of cadmium tellurideRevue de Physique Appliquée, 1977
- Comparison of dislocation densities of primary and secondary recrystallization grains of Si-FeActa Metallurgica, 1957