Avalanche breakdown of diffused silicon p-n junctions
- 1 December 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (12) , 874-881
- https://doi.org/10.1109/t-ed.1966.15862
Abstract
Using impact ionization rates of Moll et al. [23] and Lee et al. [24], the avalanche breakdown voltages of diffused silicon p-n junctions were calculated by assuming an error function diffused impurity distribution. The theoretical results were verified experimentally with samples having breakdown voltages ranging from 100 volts to 9000 volts. Good agreement was found between the experimental breakdown voltages and those calculated with the data of Moll et al. This was seen even at high breakdown voltages where the ionizing fields were far lower than those for which ionization rates have been quoted.Keywords
This publication has 31 references indexed in Scilit:
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on MicroplasmasJournal of Applied Physics, 1963
- Avalanche breakdown characteristics of a diffused P-N junctionIRE Transactions on Electron Devices, 1962
- Determination of Avalanche Breakdown in pn JunctionsJournal of Applied Physics, 1959
- Avalanche Breakdown in n-p Germanium Diffused JunctionsJournal of Applied Physics, 1959
- On Avalanche Multiplication in Semiconductor Devices†Journal of Electronics and Control, 1958
- The Avalanche Breakdown Voltage of Narrow p + νn + Diodes†Journal of Electronics and Control, 1958
- CORRESPONDENCEJournal of Electronics and Control, 1958
- On the Impact Ionization in the Space-Charge Region of p–n Junctions †Journal of Electronics and Control, 1957
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957