Short wavelength bottom-emitting vertical cavitylasers fabricated using wafer bonding
- 9 July 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (14) , 1404-1405
- https://doi.org/10.1049/el:19981002
Abstract
No abstract availableKeywords
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- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989