Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface
- 1 April 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 377-379, 125-129
- https://doi.org/10.1016/s0039-6028(96)01377-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Reconstruction of the GaAs (311)AsurfacePhysical Review B, 1995
- Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfacesSurface Science, 1994
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfacesPhysical Review B, 1991
- Orientation and preparation dependence of steps and defects on GaAsSurface Science, 1989
- Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAsSurface Science, 1987
- Theory of the Chemical Shift at Relaxed (110) Surfaces of III-V Semiconductor CompoundsPhysical Review Letters, 1987
- Low energy electron diffraction study of (221) and (311) GaAs surfacesJournal of Vacuum Science & Technology B, 1985
- Core-level photoemission study of MBE-grown GaAs(111) and (100) surfacesJournal of Vacuum Science & Technology B, 1985
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980