Theory of the Chemical Shift at Relaxed (110) Surfaces of III-V Semiconductor Compounds
- 11 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (19) , 1989-1991
- https://doi.org/10.1103/physrevlett.58.1989
Abstract
Surface core-level shifts for many semiconductor compounds are calculated in a tight-binding treatment, and with a local-charge-neutrality approximation. Both ideal and relaxed (110) surfaces are considered. Taking into account first-layer atomic displacements strongly modifies the values of calculated surface core-level shifts and provides a good agreement with experimental values.Keywords
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