Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAs
- 1 August 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 187 (1) , 112-132
- https://doi.org/10.1016/s0039-6028(87)80125-5
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Variable stoichiometry surface reconstructions: New models for GaAs(1¯1¯1¯) (2×2) and (√1¯9¯×√1¯9¯)Physical Review Letters, 1986
- Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2Physical Review Letters, 1986
- Oxidation of GaAs(110): New results and modelsPhysical Review B, 1984
- Hydrogen adsorption on GaAs(110) studied by temperature-programmed desorptionPhysical Review B, 1984
- Initial oxidation of GaAs(110): A core-level photoemission studyPhysical Review B, 1984
- Photoemission studies of surface core‐level shifts and their applicationsJournal of Vacuum Science and Technology, 1982
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Sulfur incorporation in VPE GaAsJournal of Crystal Growth, 1981
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- A multiple technique UHV chamber for the investigation of epitaxially grown semiconductor surfacesJournal of Physics E: Scientific Instruments, 1976