Sulfur incorporation in VPE GaAs
- 30 June 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 53 (3) , 598-604
- https://doi.org/10.1016/0022-0248(81)90145-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Electron mobility in vapor-grown GaAs filmsJournal of Applied Physics, 1978
- Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAsRevue de Physique Appliquée, 1978
- Doping behavior of sulfur during growth of GaAs from the vapor phaseJournal of Crystal Growth, 1977
- Difference between the (001) facet and the vicinal planes in vapour phase epitaxial growth of GaAsJournal of Crystal Growth, 1974
- Activity Coefficients for a Regular Multicomponent SolutionJournal of the Electrochemical Society, 1972
- Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAsJournal of Physics and Chemistry of Solids, 1971
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- The Ga-GaP-GaAs Ternary Phase DiagramJournal of the Electrochemical Society, 1970
- The Effect of Substrate Orientation on the Incorporation of Zinc and Selenium in Vapor-Grown Gallium PhosphideJournal of the Electrochemical Society, 1969