Electrical noise and VLSI interconnect reliability
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 2165-2172
- https://doi.org/10.1109/16.333837
Abstract
This paper discusses the characteristics of noise sources in Al-based thin films and their relationships to VLSI reliability. Techniques of applying noise measurements in detecting existing defects/damages in the films, determining electromigration activation energy, and predicting the time to failure of VLSI interconnects are presented. The noise measurement technique can be applied to wafer-level reliability testing because it is much faster than the conventional MTF method and is nondestructive in nature. Some important considerations for wafer-level reliability testing via noise measurements are also presented in this paperKeywords
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