Monolithic HEMT-HBT integration for novel microwave circuit applications
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10647775,p. 329-332
- https://doi.org/10.1109/gaas.1994.636995
Abstract
We have successfully achieved monolithic integration of HEMT and HBT devices in the same microwave circuit for the first time. We have used selective molecular beam epitaxy and a newly developed merged-processing technology to produce novel microwave integrated circuits that incorporate both pseudomorphic InGaAs-GaAs HEMTs and GaAs-AlGaAs HBTs on the same chip. The HEMT devices use 0.2 /spl mu/m gates, while the HBT devices use 2 and 3 /spl mu/m emitters. The performance of the merged HEMT and HBT devices is equivalent to that of baseline devices fabricated by our normal single-technology process. The HEMT devices achieve g/sub m/=600 mS/mm, while 3/spl times/10 /spl mu/m/sup 2/ HBTs achieve /spl beta//spl sim/50 at I/sub c/=1 mA. A monolithic HEMT-HBT integrated circuit is presented that uses active HBT regulation of a HEMT low-noise amplifier. The noise and gain performance of the monolithic HBT regulated 5-10 GHz HEMT LNA is shown to be equivalent to that of the same amplifier fabricated using our baseline HEMT-only process.Keywords
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