Atomic Scale Control of Si(001) Surface by Wet-Chemical Treatment
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2 × 1)H reconstructed Si(100) terraces versus (111) facettingSurface Science, 1993
- Scanning Tunneling Microscopy of HF-Controlled Si(111) SurfacesMRS Proceedings, 1992
- Homogeneous hydrogen-terminated Si(111) surface formed using aqueous HF solution and waterApplied Physics Letters, 1991
- Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopyApplied Physics Letters, 1991
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Scanning tunneling microscopy of silicon surfaces in air: Observation of atomic imagesJournal of Vacuum Science & Technology A, 1990