Optimization studies of materials for optically controlled semiconductor switches
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 861-865
- https://doi.org/10.1109/ppc.1989.767624
Abstract
Optimization studies of semiconductor materials for a bulk optically controlled semiconductor switch (BOSS) are reported. Cu compensated Si doped GaAs (GaAs:Si:Cu) has been chosen as the switch material. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates two important aspect of the BOSS, the existance of long "tail" conductivity (on-state) and fast optical quenching (turn-off). Some important parameters such as tail conductivity saturation and optimum Cu density for the BOSS are determined.Keywords
This publication has 16 references indexed in Scilit:
- GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decayApplied Physics Letters, 1989
- Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceJournal of Applied Physics, 1985
- Optical limiting in GaAsIEEE Journal of Quantum Electronics, 1985
- High-speed optoelectronic gallium arsenide switch triggered by mode-locked laser pulsesInternational Journal of Electronics, 1983
- Copper-related deep level defects in III–V semiconductorsJournal of Applied Physics, 1983
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Key Electrical Parameters in Semi-Insulating Materials; The Methods to Determine them in GaAsPublished by Springer Nature ,1980
- Electron and hole capture cross-sections at deep centers in gallium arsenideRevue de Physique Appliquée, 1979
- Auger recombination in InAs, GaSb, InP, and GaAsJournal of Applied Physics, 1972
- Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)Physica Status Solidi (b), 1967