Key Electrical Parameters in Semi-Insulating Materials; The Methods to Determine them in GaAs
- 1 January 1980
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979
- New model of conduction mechanism in semi-insulating GaAsJournal of Applied Physics, 1979
- Deep-level spectroscopy in high-resistivity materialsApplied Physics Letters, 1978
- Fine structure in the cathodoluminescence spectrum from chromium-doped gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976
- Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rateSolid-State Electronics, 1972
- AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDECanadian Journal of Physics, 1966
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963