Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects
- 1 May 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 141 (1-4) , 566-574
- https://doi.org/10.1016/s0168-583x(98)00097-4
Abstract
No abstract availableKeywords
Funding Information
- Asahi Glass Foundation
- Ministry of Education, Culture, Sports, Science and Technology
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