GaInAsP/InP CBH Surface-Emitting Laser with a Dielectric Multilayer Reflector
- 1 September 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (9R)
- https://doi.org/10.1143/jjap.26.1598
Abstract
The threshold current of a GaInAsP/InP surface-emitting (SE) injection laser has been reduced to 15 mA (CW) at 77 K. The diameter of circular buried mesa was made smaller (∼18 µmφ), and a 5-pair SiO2/TiO2 dielectric multilayer reflector was introduced to a circular buried heterostructure (CBH) SE laser. The threshold exhibited the lowest value ever obtained.Keywords
This publication has 2 references indexed in Scilit:
- Low-temperature CW operation of GaInAsP/InP surface-emitting laser with circular buried heterostructureElectronics Letters, 1986
- New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasersElectronics Letters, 1980