Magnetoresistance of Co/sub 100-x/Fe/sub x//Al-oxide/Co/sub 100-x/Fe/sub x/ tunnel junctions
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 36 (5) , 2812-2814
- https://doi.org/10.1109/20.908597
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Spin polarized tunneling in ferromagnetic junctionsJournal of Magnetism and Magnetic Materials, 1999
- Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)Journal of Applied Physics, 1999
- Ion beam deposition and oxidation of spin-dependent tunnel junctionsIEEE Transactions on Magnetics, 1999
- Bias Voltage Dependence of Tunneling Magnetoresistance and Annealing Effect in Spin Dependent Tunnel JunctionsJournal of the Magnetics Society of Japan, 1999
- Large tunneling magnetoresistance enhancement by thermal annealApplied Physics Letters, 1998
- Ferromagnetic tunnel junctions with plasma-oxidized Al barriers and their annealing effectsJournal of Applied Physics, 1998
- Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctionsApplied Physics Letters, 1996
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Spin-polarized electron tunnelingPhysics Reports, 1994
- Tunneling between ferromagnetic filmsPhysics Letters A, 1975