Dangling bond defects in SiC: the dependence on oxidation time
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 269-272
- https://doi.org/10.1016/s0167-9317(99)00386-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiCJournal of Electronic Materials, 1999
- Silicon carbide MOSFET technologySolid-State Electronics, 1996
- The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 KSurface Science, 1991
- Comparative oxidation studies of SiC(0001̄) and SiC(0001) surfacesJournal of Applied Physics, 1986
- Thermal oxidation of 3C silicon carbide single-crystal layers on siliconApplied Physics Letters, 1984
- Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS StructureJapanese Journal of Applied Physics, 1982