The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
- 11 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Gate oxide breakdown under Current Limited Constant Voltage StressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thicknessJournal of Applied Physics, 1999
- Percolation models for gate oxide breakdownJournal of Applied Physics, 1999
- A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1998
- The signature of conductance quantization in metallic point contactsNature, 1995