Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness
- 1 December 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (11) , 6382-6391
- https://doi.org/10.1063/1.371701
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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