Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 327-338
- https://doi.org/10.1016/0169-4332(89)90447-9
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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