AlGaN/GaN HEMTs on silicon substrates with f T of 32/20 GHz and f max of 27/22 GHz for 0.5/0.7 m gate length
- 14 March 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (6) , 288-289
- https://doi.org/10.1049/el:20020203
Abstract
AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 µm, respectively. These values are the highest reported so far on AlGaN/GaN/Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates.Keywords
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