Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

This publication has 22 references indexed in Scilit:

• AlGaN/GaN high electron mobility transistors on Si(111) substrates
  IEEE Transactions on Electron Devices, 2001
• Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
  IEEE Transactions on Electron Devices, 2001
• Current instabilities in GaN-based devices
  IEEE Electron Device Letters, 2001
• Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
  IEEE Electron Device Letters, 2001
• High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs
  IEEE Electron Device Letters, 2000
• High breakdown GaN HEMT with overlapping gate structure
  IEEE Electron Device Letters, 2000
• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
  Applied Physics Letters, 2000
• Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
  Solid-State Electronics, 1999
• Drain current compression in GaN MODFETs underlarge-signalmodulation at microwave frequencies
  Electronics Letters, 1999
• GaN: Processing, defects, and devices
  Journal of Applied Physics, 1999