AlGaN/GaN HEMTs on (111) silicon substrates
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (1) , 4-6
- https://doi.org/10.1109/55.974794
Abstract
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f/sub max//f/sub T/=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling /spl sim/16 W/mm static heat dissipation.Keywords
This publication has 8 references indexed in Scilit:
- AlGaN/GaN HEMT Optimization Using the RoundHEMT TechnologyPhysica Status Solidi (a), 2001
- AlGaN/GaN Round-HEMTs on (111) silicon substratesElectronics Letters, 2001
- Static measurements of GaN MESFETs on (111) SisubstratesElectronics Letters, 2001
- Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistorsJournal of Applied Physics, 2001
- Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substratesIEEE Transactions on Electron Devices, 2001
- GaN MESFETs on (111) Si substrate grown by MOCVDElectronics Letters, 2000
- High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBEElectronics Letters, 2000
- Novel HEMT layout: The RoundHEMTElectronics Letters, 1995