Static measurements of GaN MESFETs on (111) Sisubstrates
- 16 August 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (17) , 1095-1096
- https://doi.org/10.1049/el:20010740
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)Journal of Crystal Growth, 2000
- High-power GaN MESFET on sapphire substrateIEEE Microwave and Guided Wave Letters, 2000
- Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHzElectronics Letters, 1997