Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure
- 1 June 2000
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 34 (6) , 665-667
- https://doi.org/10.1134/1.1188051
Abstract
The threshold of the voltage-rise rate was estimated; this threshold should be achieved in a reversely biased diode structure to excite an impact ionization front propagating with a velocity higher than saturated carrier drift velocities.Keywords
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