Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures
- 30 June 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (6) , 813-824
- https://doi.org/10.1016/s0038-1101(97)00054-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Traveling carrier-density waves inn-type GaAs at low-temperature impurity breakdownPhysical Review B, 1996
- Low-temperature impurity breakdown in semiconductors: An approach towards efficient device simulationSolid-State Electronics, 1996
- Dynamics of nascent current filaments in low-temperature impurity breakdownPhysical Review B, 1996
- Bifurcation scenarios of spatio-temporal spiking in semiconductor devicesPhysics Letters A, 1994
- Simple model for multistability and domain formation in semiconductor superlatticesPhysical Review B, 1994
- A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurementsSolid-State Electronics, 1992
- Effect of distributed-gate control on current filamentation in thyristorsSolid-State Electronics, 1992
- Spatial and Spatio‐Temporal Patterns in pnpn Semiconductor DevicesPhysica Status Solidi (b), 1992
- Theory of solitary waves and spontaneous current instabilities in dc voltage biased extrinsic semiconductorsPhysica D: Nonlinear Phenomena, 1992
- Observation of spatio-temporal structures due to current filaments in Si pin diodesPhysics Letters A, 1991