Microwave pnp AlGaAs/GaAs heterojunction bipolar transistor
- 18 February 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (4) , 228-229
- https://doi.org/10.1049/el:19880152
Abstract
The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self-aligned emitter-base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common-base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions.Keywords
This publication has 2 references indexed in Scilit:
- Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- AlGaAs/GaAs Heterojunction Bipolar Transistors with 4W/mm Power Density at X-BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987