Photoconduction du Sulfo-Séléniure de Cadmium en Couche Evaporée

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Abstract
Some films of the solid solution Cd(S:Se) are prepared by vacuum evaporation. When the temperature of the glass plate or quartz plate used as a support is raised regularly from 300° to 600°C with increasing CdSe proportion, films with nearly constant hexagonality of about 80% are obtained. The c-axis of hexagonal cristallites is oriented perpendicularly to the plane of film. The spectroscopic studies and the measurements on thermally excited current and temperature dependence of photo-current yield show that some deep hole traps and shallow ones are formed in addition to deep electron traps and shallow ones. The ionization energies of these electron and hole traps as well as the band gap are regularly reduced with CdSe proportion. The experimental results are compared with those obtained previously for Cd(S:Se) Single crystals and some remarkable differences are found.