Electron beam annealing of ion implanted Al
- 1 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (5) , 366-368
- https://doi.org/10.1063/1.91489
Abstract
Pulsed electron beam annealing of Zn‐ and Sb‐implanted Al has been investigated with ion backscattering and transmission electron microscopy. The impurity redistribution produced by 50‐nsec pulses with deposited energies of 1.1 and 1.6 J/cm2 is shown to be due to diffusion in the liquid phase and provides an estimate of the melt time (∼300 nsec for 1.6 J/cm2). Comparison with conventional thermal annealing further supports an interpretation with uniform diffusion in the near‐surface region. In addition, precipitation of AsSb was found to occur within the liquid phase, which is consistent with the Al‐Sb phase diagram.Keywords
This publication has 9 references indexed in Scilit:
- Algorithm 540: PDECOL, General Collocation Software for Partial Differential Equations [D3]ACM Transactions on Mathematical Software, 1979
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
- Laser Processing of Ion Implanted SiliconIEEE Transactions on Nuclear Science, 1979
- Experimental study of precipitation in an ion-implanted metal: Sb in AlJournal of Applied Physics, 1979
- Segregation Effects in Cu-Implanted Si after Laser-Pulse MeltingPhysical Review Letters, 1978
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Impurity Diffusion in AluminumPhysical Review B, 1970
- Impurity diffusion of antimony and silver in aluminiumThe International Journal of Applied Radiation and Isotopes, 1968