Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors
- 1 September 1980
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 23 (1) , 7-14
- https://doi.org/10.1007/bf00899563
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Focal plane temperature stability requirements for thermal imaging systems using extrinsic Si:In detectorsApplied Optics, 1979
- Freie Elektronen in FestkörpernPublished by Springer Nature ,1979
- Free carrier absorption in siliconIEEE Transactions on Electron Devices, 1978
- Optical constants of various heavily doped p- and n-type silicon crystals obtained by Kramers-Kronig analysisInfrared Physics, 1977
- Silicon monolithic infrared detector arrayApplied Optics, 1977
- Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystalsInfrared Physics, 1977
- Infrared charge coupled devicesInfrared Physics, 1976
- Free carrier reflectivity in optically homogeneous siliconPhysica Status Solidi (a), 1972
- Comparison of classical approximations to free carrier absorption in semiconductorsSolid-State Electronics, 1967
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964