Temperature dependence of silicon nitride etching by atomic fluorine
- 1 January 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (1) , 386-387
- https://doi.org/10.1063/1.342555
Abstract
The temperature dependence of the etch rate of silicon nitride by atomic fluorine has been measured using a discharge-flow reactor. The activation energy of this process is 3.55±0.28 kcal/mol, quite similar to activation energies of Si and SiO2 etching, which were also measured (3.02±0.31 and 3.36±0.40 kcal/mol, respectively).This publication has 14 references indexed in Scilit:
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