Optical-MCTS of proton-irradiated n-type gallium arsenide
- 30 April 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 74 (3) , 209-213
- https://doi.org/10.1016/0038-1098(90)91022-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodesRadiation Effects, 1988
- Detection of minority-carrier defects by deep level transient spectroscopy using Schottky barrier diodesJournal of Applied Physics, 1987
- DLTS characterization of proton implantation defects in P-type GaAs by using schottky barrier diodesRadiation Effects, 1987
- Irradiation-induced defects inp-type GaAsPhysical Review B, 1986
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Electrical properties of Fe in GaAsJournal of Applied Physics, 1983
- Electron irradiation effects in p-type GaAsJournal of Applied Physics, 1982
- Detection of minority-carrier traps using transient spectroscopyElectronics Letters, 1979
- Photocapacitance effects of deep traps in epitaxial GaAsJournal of Applied Physics, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974