A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodes

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Abstract
Schottky barrier diodes (SBD's) were used for Deep Level Transient Spectroscopy (DLTS) characterization of electrically active defects in proton implanted n-GaAs. Although SBD's are usually only used for the detection of majority carrier defects (electron traps in n-GaAs), the fabrication of high barrier height SBD's on lowly doped ( 1 × l015/cm3) n-GaAs in conjunction with a forward bias DLTS filling pulse enabled the detection of minority carrier defects (hole traps in n-GaAs) as well, without using optical excitation. The most prominent electron and hole traps detected had properties that corresponded with those of the well known irradiation-induced electron traps E1-E4 and hole traps H0-H4, associated with the damage produced during high energy particle irradiation.