DLTS characterization of proton implantation defects in P-type GaAs by using schottky barrier diodes
- 1 March 1987
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 103 (1-4) , 197-202
- https://doi.org/10.1080/00337578708221252
Abstract
Bulk grown ρ-GaAs was implanted with 90 keV protons at a fluence of 1012./Vcm2. After fabricating Ti/Al Schottky barrier diodes, the implantation induced defects were characterized by deep level transient spectroscopy (DLTS). The activation energies of the detected hole defects ranged from 0.29 eV to 0.68 eV above the valence band. The electrical properties of three of these defects could be correlated with those of implantation induced defects detected previously by DLTS usingp-n junctions.Keywords
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