Deep level transient spectroscopy of hole defects in bulk-grown p-GaAs using Schottky barrier diodes
- 13 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2) , 130-132
- https://doi.org/10.1063/1.96973
Abstract
Schottky barrier diodes were used to detect and study hole defects in bulk‐grown p‐type GaAs by deep level transient spectroscopy. Several defects with concentrations of 1013–1016/cm3 were studied. It was found that two of these defects, with electronic levels at Ev +0.42 eV and Ev +0.58 eV, have electronic properties that closely correspond to those of Cu‐ and Fe‐related defects in GaAs. It is concluded that Schottky barrier diodes on p‐GaAs can be very useful to detect and characterize typical metallic contaminants in GaAs.Keywords
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