Field-Induced Energy Shift of Excitonic Absorption in InGaAs/InP Multiquantum Wells Grown by Metalorganic Molecular Beam Epitaxy

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Abstract
Excitonic absorption features are observed at room temperature in InGaAs/InP multiquantum-well structures grown by metalorganic molecular beam epitaxy. The heavy-hole exciton peak was found to shift toward the lower-energy side as the result of an external electric field. These peak shifts showed good agreement with the results of an exact calculation using phase-shift analysis in the resonance-scattering theory for this quantum well.