Electronic mobility anisotropy of layered semiconductors: transversal photoconductivity measurements at n-MoSe2

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Abstract
An analysis of the shape of photoconductivity spectral distribution curves of n-MoSe2 in the range of the direct and indirect fundamental optical transitions is presented, taking surface and volume recombination of the photogenerated charge carriers into consideration. The c-axis hole mobility, mu h,z, is almost as great as that in the layers, mu h,xy, at room temperature in accordance with band calculations where the top valence band is three-dimensional, and gives allowance for a low effective hole mass anisotropy. A very large anisotropy of mu h,xy/ mu h,z of approximately 102-103 at 77K can be qualitatively understood in terms of extrinsic hole scattering from ribbons of stacking faults. The surface recombination rate is enhanced by the presence of (1011) faces on the illuminated surface.

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