Effects of grain-boundary trapping-state energy distribution on the activation energy of resistivity of polycrystalline-silicon films
- 31 May 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (5) , 463-466
- https://doi.org/10.1016/0038-1101(84)90154-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illuminationSolid-State Electronics, 1982
- Conduction in polycrystalline silicon: Diffusion theory and extended state mobility modelIEEE Electron Device Letters, 1982
- A model for conduction in polycrystalline silicon—Part I: TheoryIEEE Transactions on Electron Devices, 1981
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Dependence of resistivity on the doping level of polycrystalline siliconJournal of Applied Physics, 1975
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971