Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy
- 5 October 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1646-1648
- https://doi.org/10.1063/1.108439
Abstract
GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi-insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi-insulating LT GaP films.Keywords
This publication has 7 references indexed in Scilit:
- Breakdown of crystallinity in low-temperature-grown GaAs layersApplied Physics Letters, 1991
- GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitatesJournal of Crystal Growth, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Monolithic photovoltaic PbS-on-Si infrared-sensor arrayIEEE Electron Device Letters, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988