Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs

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Abstract
An energetic electron beam has been used to stimulate crystallization of spatially isolated amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was found that crystallization was induced even when the energy of the electron beam was less than that required to create point defects in the crystalline structure. The rate of crystallization depended on the material and on the electron energy. In all materials, the rate decreases as the electron energy increases from 50 keV (the lowest electron energy used), reaching a minimum value at an electron energy slightly below the displacement threshold voltage. Above the displacement threshold, the regrowth rate again increases with increasing electron energy. The possible role of electron‐beam heating was studied both theoretically and experimentally. Calculations suggested heating effects were negligible and this was confirmed by in situ ion implantations and electron irradiations performed at 30 K, where subthreshold electrons stimulated crystallization. The subthreshold and low‐temperature results are consistent with the model that the crystallization process is dependent on the creation of defects (dangling bonds and kinks) at the crystalline‐amorphous (c‐a) interface. The crystallization stimulated by the subthreshold electron beams suggests that electronic excitation of the bonds along the c‐a interface can induce the amorphous to crystalline transition.