Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L89
- https://doi.org/10.1143/jjap.24.l89
Abstract
Single-longitudinal-mode selfaligned (AlGa)As double-heterostructure (DH) lasers were fabricated by two-step molecular beam epitaxial technique. The AlGaAs surface was protected by a GaAs thin layer during the photolithographic process. The GaAs was thermally etched selectively just prior to regrowth in the MBE system. There was no problem associated with the regrowth of AlGaAs using this GaAs passivation technique. The room temperature CW threshold current for a device with a 200 µm-long and 3 µm-wide stripe was 40 mA. The emission wavelength was 780 nm and a fundamental transverse mode was achieved.Keywords
This publication has 5 references indexed in Scilit:
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- High-through-put, high-yield, and highly-reproducible (AlGa)As double-heterostructure laser wafers grown by molecular beam epitaxyApplied Physics Letters, 1981
- Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasersApplied Physics Letters, 1980