Defects and metal states: Towards a predictive model for the Schottky barrier
- 15 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (3) , 1947-1950
- https://doi.org/10.1103/physrevb.40.1947
Abstract
In the presence of metallic states, deposition-generated midgap levels at the semiconductor surface evolve into resonances that accommodate the fractional charge density that ultimately determines the Fermi level and hence the Schottky-barrier height. This concept is applied to calculate both the barrier heights of GaAs for nonalloyed metal-semiconductor interfaces, and the index-of-interface behavior for 15 tetrahedrally coordinated semiconductors.Keywords
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