Nucleationless Three-Dimensional Island Formation in Low-Misfit Heteroepitaxy
- 15 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (20) , 4637-4640
- https://doi.org/10.1103/physrevlett.84.4637
Abstract
The formation of faceted three-dimensional islands during growth of low-misfit alloys on Si(100) has been investigated by low-energy electron microscopy. The formation of the islands in these alloy systems does not involve three-dimensional nucleation, but rather proceeds via a precursor array of shallow, stepped mounds on the surface that result from the inherent morphological instability of the strained alloy film.
Keywords
This publication has 20 references indexed in Scilit:
- Embedding of Nanoscale 3D SiGe Islands in a Si MatrixPhysical Review Letters, 1998
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001)Physical Review Letters, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- SiGe Coherent Islanding and Stress Relaxation in the High Mobility RegimePhysical Review Letters, 1997
- Strain-Induced Modulations in the Surface Morphology of Heteroepitaxial LayersMRS Bulletin, 1996
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Evolution of surface morphology and strain during SiGe epitaxyThin Solid Films, 1992
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- On the stability of surfaces of stressed solidsActa Metallurgica, 1989
- Elastic-plastic memory and kinematic-type hardeningActa Metallurgica, 1975