Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects
- 28 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (13) , 1681-1683
- https://doi.org/10.1063/1.111830
Abstract
The Ge‐composition dependence of cyclotron effective mass of quasi‐two‐dimensional holes in strained Si1−xGex/Si quantum well structures has been investigated by far‐infrared magneto‐optical spectroscopy at low temperatures and high magnetic fields up to 23 T. The in‐plane effective mass determined from cyclotron resonance energies is much less than that of unstrained Si1−xGex alloys and decreases systematically from 0.40me to 0.29me as the Ge composition increases from x=0.13 to x=0.37, indicating the importance of the strain effect on the valence‐band structure. The nonparabolicity correction is significant in explaining the discrepancy between the measured values and the calculated band‐edge masses.Keywords
This publication has 15 references indexed in Scilit:
- Cyclotron resonance studies of two-dimensional holes in strained Si1−xGex/Si quantum wellsApplied Physics Letters, 1993
- Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers onIEEE Transactions on Electron Devices, 1992
- Effective mass for strained p-type Si1−xGexJournal of Applied Physics, 1991
- Energy-band structure for strainedp-typePhysical Review B, 1991
- Theory of the hole subband dispersion in strained and unstrained quantum wellsPhysical Review B, 1986
- Large valence-band nonparabolicity and tailorable hole masses in strained-layer superlatticesApplied Physics Letters, 1986
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
- Light-hole conduction in InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Valence-band parameters and hole mobility of Ge-Si alloys-theoryJournal of Physics C: Solid State Physics, 1983
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956