Formation of two-dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures
- 1 July 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (1) , 588-590
- https://doi.org/10.1063/1.362722
Abstract
Two-dimensional electron or hole gases (2DEG or 2DHG) are confined at the same interface in an undoped heterostructure by an electric field generated by a top gate. The combination of ion-implanted ohmic regions, an undoped heterostructure with superlattice barriers, and a metal gate is used to fabricate structures by a conventional process without self-alignment. High-quality 2DEG and 2DHG with a carrier density up to 8×1011 cm−2 are formed with a small gate leakage current. Switching between 2DEG and 2DHG at the same heterointerface is achieved by changing the sign of the gate voltage.This publication has 12 references indexed in Scilit:
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