Wavelength dependence of saturation and thermal effects in multiple quantum well modulators
- 27 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (13) , 1715-1717
- https://doi.org/10.1063/1.110692
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Resonant tunneling in thin-barrier multiple-quantum-well electroabsorption modulatorsJournal of the Optical Society of America B, 1992
- Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuitIEEE Photonics Technology Letters, 1992
- Fabry–Perot-enhanced self-electro-optic-effect devicesOptics Letters, 1992
- Electro-absorption and refraction in Fabry-Perot quantum well modulators: a general discussionOptical and Quantum Electronics, 1992
- High-power quantum-well modulators exploiting resonant tunnelingApplied Physics Letters, 1991
- Dynamic optical switching of symmetric self-electro-optic effect devicesApplied Physics Letters, 1991
- Optical digital processor using arrays of symmetric self-electrooptic effect devicesApplied Optics, 1991
- Exciton saturation in electrically biased quantum wellsApplied Physics Letters, 1990
- Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystalsOptical and Quantum Electronics, 1990
- Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistorIEEE Photonics Technology Letters, 1989